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The same band alignment of two hybrid 2D/3D vertical heterojunctions formed by combining monolayer MoS2 with semi-polar (11-22) GaN and c-plane (0001) GaN 期刊论文
APPLIED SURFACE SCIENCE, 2022
Xing, Shuan; Zhao, Guijuan; Mao, Bangyao; Huang, Heyuan; Wang, Lianshan; Li, Xunshuan; Yang, Wenge; Liu, Guipeng; Yang, Jianhong
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The same band alignment of two hybrid 2D/3D vertical heterojunctions formed by combining monolayer MoS2 with semi-polar (11-22) GaN and c-plane (0001) GaN 期刊论文
APPLIED SURFACE SCIENCE, 2022, 卷号: 599
Authors:  Xing, Shuan;  Zhao, GJ(赵桂娟);  Mao, Bangyao;  Huang, Heyuan;  Wang, Lianshan;  Li, XS(李训栓);  Yang, WG(杨文革);  Liu, GP(刘贵鹏);  Yang, JH(杨建红)
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Semi-polar GaN  c-plane GaN  Molybdenum disulfide  2D  3D heterojunctions  Band alignment  XPS  
Determination of band alignment in two-dimensional h-BN/WS2 van der waals heterojunction by X-ray photoelectron spectroscopy 期刊论文
Journal of Alloys and Compounds, 2021, 卷号: 854
Authors:  Xing, Shu'an;  Zhao, Guijuan;  Xu, Yan;  Wang, J(王杰);  Li, XS(李训栓);  Yang, Wenge;  Liu, GP(刘贵鹏);  Yang, JH(杨建红)
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Alignment  Energy gap  Heterojunctions  Monolayers  Photoelectrons  Photons  Tungsten compounds  Van der Waals forces  X ray photoelectron spectroscopyBand alignments  Conduction band offset  Measured values  Type i band alignments  Valence band offsets  Van der waals  
Analysis of dark current dependent upon threading dislocations in Ge/Si heterojunction photodetectors 期刊论文
MICROELECTRONICS INTERNATIONAL, 2012, 卷号: 29, 期号: 3, 页码: 136-140
Authors:  Wei, Y;  Cai, XY;  Ran, JZ(冉金枝);  Yang, JH(杨建红);  Yang, JH (reprint author), Lanzhou Univ, Inst Microelect, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China.
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Electric current  Sensors  Ge/Si heterojunction photodetectors  Threading dislocation  Dark current  
High-precision measurement of the proton elastic form factor ratio mu(p)G(E)/G(M) at low Q(2) 期刊论文
PHYSICS LETTERS B, 2011, 卷号: 705, 期号: 1-2, 页码: 59-64
Authors:  Zhan, X;  Allada, K;  Armstrong, DS;  Arrington, J;  Bertozzi, W;  Boeglin, W;  Chen, JP;  Chirapatpimol, K;  Choi, S;  Chudakov, E...Zhan, X;  Allada, K;  Armstrong, DS;  Arrington, J;  Bertozzi, W;  Boeglin, W;  Chen, JP;  Chirapatpimol, K;  Choi, S;  Chudakov, E;  Cisbani, E;  Decowski, P;  Dutta, C;  Frullani, S;  Fuchey, E;  Garibaldi, F;  Gilad, S;  Gilman, R;  Glister, J;  Hafidi, K;  Hahn, B;  Hansen, JO;  Higinbotham, DW;  Holmstrom, T;  Holt, RJ;  Huang, J;  Huber, GM;  Itard, F;  de Jager, CW;  Jiang, X;  Johnson, M;  Katich, J;  de Leo, R;  LeRose, JJ;  Lindgren, R;  Long, E;  Margaziotis, DJ;  Beck, SMT;  Meekins, D;  Michaels, R;  Moffit, B;  Norum, BE;  Olson, M;  Piasetzky, E;  Pomerantz, I;  Protopopescu, D;  Qian, X;  Qiang, Y;  Rakhman, A;  Ransome, RD;  Reimer, PE;  Reinhold, J;  Riordan, S;  Ron, G;  Saha, A;  Sarty, AJ;  Sawatzky, B;  Schulte, EC;  Shabestari, M;  Shahinyan, A;  Shneor, R;  Sirca, S;  Solvignon, P;  Sparveris, NF;  Strauch, S;  Subedi, R;  Sulkosky, V;  Vilardi, I;  Wang, Y;  Wojtsekhowski, B;  Ye, Z;  Zhang, Y;  Arrington, J (reprint author), Argonne Natl Lab, Div Phys, Argonne, IL 60439 USA.
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Tb 掺杂ZnO 薄膜和高K 栅介质 Er2O3薄膜的制 学位论文
博士, 兰州: 兰州大学, 2006
Authors:  方泽波
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Tb  ZnO  Er2O3