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兰州大学机构库

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Revelation of resistive switching mechanism in AlOx based RRAM device 期刊论文
PHYSICA SCRIPTA, 2023, 卷号: 98, 期号: 9
Authors:  Fu, Liping;  Liu, Hengyi;  Fan, Xiaolong;  Li, Yingtao
Favorite  |    Submit date：2023/11/28
resistive random access memory  numerical physics model  conductive filament  metal  oxygen vacancy  
The Discovery of a High-Mobility Two-Dimensional Bismuth Oxyselenide Semiconductor and Its Application in Nonvolatile Neuromorphic Devices 期刊论文
ACS Nano, 2023, 卷号: 17, 期号: 11, 页码: 10783-10791
Authors:  He, Yuyu;  Xu, Qi;  Dong, Xinyue;  Liu, Junhao;  Li, Li;  Wang, Bing;  Chen, Jiabiao;  Zhang, Lei;  Gao, Zhansheng;  Ai, Wei...He, Yuyu;  Xu, Qi;  Dong, Xinyue;  Liu, Junhao;  Li, Li;  Wang, Bing;  Chen, Jiabiao;  Zhang, Lei;  Gao, Zhansheng;  Ai, Wei;  Liu, Zhaochao;  Zhou, Zhengyang;  Xu, Weigao;  Fu, Huixia;  Luo, Feng;  Wu, Jinxiong
Favorite  |    Submit date：2023/07/18
2D semiconductor  Bi3O2.5Se2  non-neutral layered structure  electrostatic doping  nonvolatile memory  
Piezostrain-controlled magnetization compensation temperature in ferrimagnetic GdFeCo alloy films 期刊论文
PHYSICAL REVIEW B, 2023, 卷号: 107, 期号: 18
Authors:  Wang, Junshuai;  Li, Mingfen;  Li, Chaozhong;  Tang, Rujun;  Si, Mingsu;  Chai, Guozhi;  Yao, Jinli;  Jia, Chenglong;  Jiang, Changjun
Favorite  |    Submit date：2023/07/18
Piezostrain-controlled magnetization compensation temperature in ferrimagnetic GdFeCo alloy films 期刊论文
PHYSICAL REVIEW B, 2023, 卷号: 107, 期号: 18
Authors:  Wang, Junshuai;  Li, Mingfen;  Li, Chaozhong;  Tang, Rujun;  Si, Mingsu;  Chai, GZ(柴国志);  Yao, JL(幺金丽);  Jia, CL(贾成龙);  Jiang, Changjun
Favorite  |    Submit date：2023/07/18
Cobalt alloys  Electric fields  Energy efficiency  Ferrimagnetism  Ferroelectricity  Gadolinium alloys  Lead titanate  Magnesium alloys  Magnetic storage  Magnetization  Random access storage  Ternary alloys  Titanium alloys  Alloy film  Compensation temperature  Electrical control  Exchange bias  Exchange coupling strength  Ferrimagnetics  Lattice strain  Nonvolatile  Pb(Mg1/3Nb2/3)O3  Spin polarized first principles calculations  
Voltage-Controlled Dzyaloshinskii-Moriya Interaction Torque Switching of Perpendicular Magnetization 期刊论文
PHYSICAL REVIEW LETTERS, 2023, 卷号: 130, 期号: 5
Authors:  Yu, Dongxing;  Ga, Yonglong;  Liang, Jinghua;  Jia, CL(贾成龙);  Yang, Hongxin
Favorite  |    Submit date：2023/04/12
Chromium compounds  Copper compounds  Magnetization  MRAM devices  Selenium compounds  'current  Dzyaloshinskii-Moriya interaction  Magnetic random access memory  Magnetization switching  Multiferroics  Perpendicular magnetization  Spin orbits  Spin transfer torque  Spintronics device  Voltage-controlled  
Voltage-Controlled Dzyaloshinskii-Moriya Interaction Torque Switching of Perpendicular Magnetization 期刊论文
PHYSICAL REVIEW LETTERS, 2023, 卷号: 130, 期号: 5
Authors:  Yu, Dongxing;  Ga, Yonglong;  Liang, Jinghua;  Jia, CL(贾成龙);  Yang, Hongxin
Favorite  |    Submit date：2023/05/25
Chromium compounds  Copper compounds  Magnetization  MRAM devices  Selenium compounds  'current  Dzyaloshinskii-Moriya interaction  Magnetic random access memory  Magnetization switching  Multiferroics  Perpendicular magnetization  Spin orbits  Spin transfer torque  Spintronics device  Voltage-controlled  
Voltage-Controlled Dzyaloshinskii-Moriya Interaction Torque Switching of Perpendicular Magnetization 期刊论文
PHYSICAL REVIEW LETTERS, 2023, 卷号: 130, 期号: 5
Authors:  Yu, Dongxing;  Ga, Yonglong;  Liang, Jinghua;  Jia, CL(贾成龙);  Yang, Hongxin
Favorite  |    Submit date：2023/07/18
Chromium compounds  Copper compounds  Magnetization  MRAM devices  Selenium compounds  'current  Dzyaloshinskii-Moriya interaction  Magnetic random access memory  Magnetization switching  Multiferroics  Perpendicular magnetization  Spin orbits  Spin transfer torque  Spintronics device  Voltage-controlled  
Voltage-Controlled Dzyaloshinskii-Moriya Interaction Torque Switching of Perpendicular Magnetization 期刊论文
PHYSICAL REVIEW LETTERS, 2023, 卷号: 130, 期号: 5
Authors:  Yu, Dongxing;  Ga, Yonglong;  Liang, Jinghua;  Jia, Chenglong;  Yang, Hongxin
Favorite  |    Submit date：2023/04/12
In-Memory Mathematical Operations with Spin-Orbit Torque Devices 期刊论文
Advanced Science, 2022, 卷号: 9, 期号: 25
Authors:  Li, Ruofan;  Song, Min;  Guo, Zhe;  Li, Shihao;  Duan, Wei;  Zhang, Shuai;  Tian, Yufeng;  Chen, Zhenjiang;  Bao, Yi;  Cui, Jinsong...Li, Ruofan;  Song, Min;  Guo, Zhe;  Li, Shihao;  Duan, Wei;  Zhang, Shuai;  Tian, Yufeng;  Chen, Zhenjiang;  Bao, Yi;  Cui, Jinsong;  Xu, Yan;  Wang, Yaoyuan;  Tong, Wei;  Yuan, Zhe;  Cui, Yan;  Xi, Li;  Feng, Dan;  Yang, Xiaofei;  Zou, Xuecheng;  Hong, Jeongmin;  You, Long
Favorite  |    Submit date：2022/11/08
CMOS integrated circuits  Energy efficiency  Image processing  Metals  MOS devices  Oxide semiconductors  Pattern recognition  Analog mathematical computing  Arithmetic operations  Images processing  In-memory computing  Mathematical computing  Mathematical operations  Neural-networks  Signal-processing  Spin orbits  Spin-orbit torque  
Electrically and optically erasable non-volatile two-dimensional electron gas memory 期刊论文
Nanoscale, 2022, 卷号: 14, 期号: 34, 页码: 12339-12346
Authors:  Zheng, Dongxing;  Zhang, Junwei;  He, Xin;  Wen, Yan;  Li, Peng;  Wang, Yuchen;  Ma, Yinchang;  Bai, Haili;  Alshareef, Husam N.;  Zhang, Xi-Xiang...Zheng, Dongxing;  Zhang, Junwei;  He, Xin;  Wen, Yan;  Li, Peng;  Wang, Yuchen;  Ma, Yinchang;  Bai, Haili;  Alshareef, Husam N.;  Zhang, Xi-Xiang
Adobe PDF(1829Kb)  |  Favorite  |    Submit date：2022/11/08
Aluminum compounds  Electrons  Interface states  Lanthanum compounds  Oxygen vacancies  Phase interfaces  Strontium titanates  Titanium compounds  Band insulators  High mobility  Insulating state  Metallic state  Nonvolatile  Optical illumination  Positive pulse voltage  Two-dimensional electron gas  Two-dimensional electron gases (2DEG)  Wide-band