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Ge-on-insulator wafer with ultralow defect density fabricated by direct condensation of SiGe-on-insulator structure 期刊论文
APPLIED SURFACE SCIENCE, 2015, 卷号: 356, 期号: 30, 页码: 1052-1057
Authors:  Lin Ye;  Miao Zhang;  Zengfeng Di;  Zhongyin Xue;  Yang, JH(杨建红);  Xi Wang
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Defect density  Condensation  Defects  Dislocations (crystals)  Germanium  Hole mobility  Interfaces (materials)  Semiconductor insulator boundaries  Silicon alloys  Silicon wafers  Density of defects  Ge condensation  Ge on insulators  Low defect densities  SiGe-on-insulator structures  Threading dislocation  Threading dislocation densities  Wafer manufacturing  
Electrochemical synthesis of ZnO nanoflowers and nanosheets on porous Si as photoelectric materials 期刊论文
APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 期号: 10
Authors:  Kou, HH;  Zhang, X;  Du, YL(杜永令);  Ye, WC(叶为春);  Lin, SX;  Wang, CM(王春明);  Wang, CM (reprint author), Lanzhou Univ, Dept Chem, Lanzhou 730000, Peoples R China.
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ZnO  Si  PS  Electrodeposition  OCP  Band gap  
Ultralow temperature ramping rate of LT to HT for the growth of highquality Ge epilayer on Si (100) by RPCVD 期刊论文
APPLIED SURFACE SCIENCE, 2014, 卷号: 299, 页码: 1-5
Authors:  Chen, D;  Xue, ZY;  Wei, X;  Wang, G;  Ye, L;  Zhang, M;  Wang, DW;  Liu, S(刘肃);  Liu, S (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China.
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Semiconductor  Germanium  Epitaxial growth  RPCVD  
Direct Growth of Graphene Film on Germanium Substrate 期刊论文
Scientific Reports, 2013, 卷号: 3, 页码: -
Authors:  Wang, G;  Zhang, M;  Zhu, Y;  Ding, GQ;  Jiang, D;  Guo, QL;  Liu, S(刘肃);  Xie, XM;  Chu, PK;  Di, ZF...Wang, G;  Zhang, M;  Zhu, Y;  Ding, GQ;  Jiang, D;  Guo, QL;  Liu, S(刘肃);  Xie, XM;  Chu, PK;  Di, ZF;  Wang, X;  Chu, PK (reprint author), City Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R China.
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High-Yield Chemical Vapor Deposition Growth of High-Quality Large-Area AB-Stacked Bilayer Graphene 期刊论文
ACS Nano, 2012, 卷号: 6, 期号: 9, 页码: 8241-8249
Authors:  Liu, LX;  Zhou, HL;  Cheng, R;  Yu, WJ;  Liu, Y;  Chen, Y;  Shaw, J;  Zhong, X;  Huang, Y;  Duan, XF...Liu, LX;  Zhou, HL;  Cheng, R;  Yu, WJ;  Liu, Y;  Chen, Y;  Shaw, J;  Zhong, X;  Huang, Y;  Duan, XF;  Huang, Y (reprint author), Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA.
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Bilayer Graphene  Band Gap  Ab Stacking  Chemical Vapor Deposition  Copper Foil  
Large-scale preparation of ZnO nanoflowers from nanowires with high length/diameter ratio 期刊论文
MATERIALS LETTERS, 2012, 卷号: 84, 页码: 66-68
Authors:  Luo, CQ;  Wang, ZK;  Ma, CS;  Liu, QF(刘青芳);  Wang, JB(王建波);  Wang, JB (reprint author), Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Inst Appl Magnet, Lanzhou 730000, Peoples R China.
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Deposition  Semiconductors  Microstructure  
Growth of Horizonatal ZnO Nanowire Arrays on Any Substrate 期刊论文
Journal of Physical Chemistry C, 2008, 卷号: 112, 期号: 48, 页码: 18734-18736
Authors:  Qin, Y(秦勇);  Yang, RS;  Wang, ZL;  Wang, ZL (reprint author), Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA.
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Wafer-Scale Epitaxial Growth of the Thickness-Controllable Van Der Waals Ferromagnet CrTe2 for Reliable Magnetic Memory Applications 期刊论文
ADVANCED FUNCTIONAL MATERIALS, 2023
Authors:  Liu, Xinqi;  Huang, Puyang;  Xia, Yunyouyou;  Gao, Lei;  Liao, Liyang;  Cui, Baoshan;  Backes, Dirk;  van der Laan, Gerrit;  Hesjedal, Thorsten;  Ji, Yuchen...Liu, Xinqi;  Huang, Puyang;  Xia, Yunyouyou;  Gao, Lei;  Liao, Liyang;  Cui, Baoshan;  Backes, Dirk;  van der Laan, Gerrit;  Hesjedal, Thorsten;  Ji, Yuchen;  Chen, Peng;  Zhang, Yifan;  Wu, Fan;  Wang, Meixiao;  Zhang, Junwei;  Yu, Guoqiang;  Song, Cheng;  Chen, Yulin;  Liu, Zhongkai;  Yang, Yumeng;  Peng, Yong;  Li, Gang;  Yao, Qi;  Kou, Xufeng
Favorite  |    Submit date:2023/11/28
2D ferromagnets  interface engineering  spin-orbit torque switches  van der Waals heterostructures  wafer-scale epitaxial growth  
Etch characteristics of Si1-xGex films in HNO3:H2O:HF 期刊论文
Science China-Technological Sciences, 2011, 卷号: 54, 期号: 10, 页码: 2802-2807
Authors:  Xue, ZY;  Wei, X;  Liu, LJ;  Chen, D;  Zhang, B;  Zhang, M;  Wang, X;  Zhang, M (reprint author), Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China.
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Si1-xGex  etch rate  selectivity  HNO3  HF