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兰州大学机构库

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Ultralow temperature ramping rate of LT to HT for the growth of highquality Ge epilayer on Si (100) by RPCVD 期刊论文
APPLIED SURFACE SCIENCE, 2014, 卷号: 299, 页码: 1-5
Authors:  Chen, D;  Xue, ZY;  Wei, X;  Wang, G;  Ye, L;  Zhang, M;  Wang, DW;  Liu, S(刘肃);  Liu, S (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China.
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Semiconductor  Germanium  Epitaxial growth  RPCVD  
Broadband antireflection of silicon nanorod arrays prepared by plasma enhanced chemical vapor deposition 期刊论文
APPLIED SURFACE SCIENCE, 2011, 卷号: 258, 期号: 3, 页码: 1058-1061
Authors:  Wang, DS;  Yang, ZB;  Li, F;  Liu, DQ;  Wang, P(王鹏);  He, DY(贺德衍);  He, DY (reprint author), Lanzhou Univ, Dept Phys, Lanzhou 730000, Peoples R China.
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Si nanorods  VHF-PECVD  Electrodeposition  Antireflection  
Electrochemical synthesis of ZnO nanoflowers and nanosheets on porous Si as photoelectric materials 期刊论文
APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 期号: 10
Authors:  Kou, HH;  Zhang, X;  Du, YL(杜永令);  Ye, WC(叶为春);  Lin, SX;  Wang, CM(王春明);  Wang, CM (reprint author), Lanzhou Univ, Dept Chem, Lanzhou 730000, Peoples R China.
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ZnO  Si  PS  Electrodeposition  OCP  Band gap  
A fluorine-contained copolymer ultra-thin film: Stability and electrochemical corrosion behavior 期刊论文
APPLIED SURFACE SCIENCE, 2010, 卷号: 256, 期号: 24
Authors:  Luo, J;  Cheng, JC;  Dong, XN;  Liu, YJ;  Huang, GS(黄国生);  Zhang, JY;  Huang, GS (reprint author), Lanzhou Univ, State Key Lab Appl Organ Chem, Coll Chem & Chem Engn, 222 Tianshui Middle Rd, Lanzhou 730000, Peoples R China.
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Copolymer  Ultra-thin film  Electrochemical corrosion  Surface modification  
Fabrication and electrochemistry study of multi-thiol coronary molecule monolayers 期刊论文
APPLIED SURFACE SCIENCE, 2010, 卷号: 256, 期号: 6
Authors:  Chen, L;  Cao, XP(曹小平);  Zhang, JY;  Zhang, JY (reprint author), Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, 18,Middle Tianshui Rd, Lanzhou 730000, Peoples R China.
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Coronary molecule  Stepwise assembly  Mixed monolayer  Cyclic voltammetry  Electrochemical impedance spectroscopy  
Structural characterization of beta-V2O5 films prepared by DC reactive magnetron sputtering 期刊论文
APPLIED SURFACE SCIENCE, 2009, 卷号: 255, 期号: 7, 页码: 4177-4179
Authors:  Su, Q(苏庆);  Lan, W(兰伟);  Wang, YY(王印月);  Liu, XQ;  Liu, XQ (reprint author), Lanzhou Univ, Dept Phys, Lanzhou 730000, Peoples R China.
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beta-V2O5 films  Sputtering  Deposition temperature  Structure  Raman spectra  
Comparative study of electroless copper deposition based on the seed layers of Pd, PtPd and AuPd 期刊论文
APPLIED SURFACE SCIENCE, 2009, 卷号: 255, 期号: 6
Authors:  Ma, CL;  Ye, WC(叶为春);  Shi, XZ;  Chang, YL(常彦龙);  Chen, Y;  Wang, CM(王春明);  Wang, CM (reprint author), Lanzhou Univ, Dept Chem, Lanzhou 730000, Peoples R China.
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Electroless copper  Pd seed  PtPd seed  AuPd seed  
Pd-catalyzed coupling reaction on the organic monolayer: Sonogashira reaction on the silicon (111) surfaces 期刊论文
APPLIED SURFACE SCIENCE, 2008, 卷号: 255, 期号: 5
Authors:  Qua, MN;  Zhang, Y;  He, JM;  Cao, XP(曹小平);  Zhang, JY;  Cao, XP (reprint author), Lanzhou Univ, Coll Chem & Chem Engn, State Key Lab Appl Organ Chem, Lanzhou 730000, Peoples R China.
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Surface reaction  Hydrogen-terminated silicon surfaces  Sonogashira coupling reaction  X-ray photoelectron spectroscopy  
The effect of hydrogen on copper nitride thin films deposited by magnetron sputtering 期刊论文
APPLIED SURFACE SCIENCE, 2008, 卷号: 254, 期号: 16, 页码: 5012-5015
Authors:  Zhang, GG;  Yan, PX(闫鹏勋);  Wu, ZG(吴志国);  Wang, J(王君);  Chen, JT;  Yan, PX (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 73000, Peoples R China.
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copper nitride  thin films  hydrogen  structure  thermal properties  
Electrochemical corrosion behaviors of a-C : H and a-C : N-X : H films 期刊论文
APPLIED SURFACE SCIENCE, 2008, 卷号: 254, 期号: 10, 页码: 3021-3025
Authors:  Wang, Z;  Wang, CB;  Wang, Q(王琦);  Zhang, JY;  Zhang, JY (reprint author), Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, 18 Tianshui Middle Rd, Lanzhou 730000, Peoples R China.
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Electrochemical corrosion  CVD  a-C : H films  a-C : N-X : H films