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兰州大学机构库

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Application of stratified implantation for silicon micro-strip detectors 期刊论文
Chinese Physics C, 2015, 卷号: 39, 期号: 6, 页码: 066005-1-066005-4
Authors:  Li, HX;  Li, ZK;  Wang, FC;  Li, RH;  Chen, CH;  Wang, XH;  Rong, XJ;  Liu, FQ;  Wang, ZS;  Li, CY...Li, HX;  Li, ZK;  Wang, FC;  Li, RH;  Chen, CH;  Wang, XH;  Rong, XJ;  Liu, FQ;  Wang, ZS;  Li, CY;  Zu, KL;  Lu, ZW;  Li, HX (reprint author), Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China.
Favorite  |    Submit date：2017/01/13
nuclear radiation detectors  stratified implantation  P-N junction  reverse body resistance  
Preparation of a silicon micro-strip nuclear radiation detector by a two-step annealing process 期刊论文
Chinese Physics C, 2011, 期号: 7, 页码: 635-637
Authors:  Li HX(李海霞);  Li ZK(李占奎);  Wang FC(王方聪);  Wang ZS(王柱生);  Wang XH(王秀华);  Li CY(李春艳)
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nuclear radiation detector  two-step annealing  reverse body resistance  
Diffusion and Interface Reaction of Cu/Si (100) Films Prepared by Cluster Beam Deposition 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 3, 页码: -
Authors:  Gao, XX;  Jia, YH;  Li, GP(李公平);  Cho, SJ;  Kim, H;  Gao, XX (reprint author), Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 730000, Peoples R China.
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Fabrication of Dry Electrode for Recording Bio-potentials 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 1, 页码: 010701-
Authors:  Wang, Y;  Guo, K;  Pei, WH;  Gui, QA;  Li, XQ;  Chen, HD;  Yang, JH(杨建红);  Wang, Y (reprint author), Lanzhou Univ, Inst Microelect, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China.
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Optical properties of hexagonal boron nitride thin films deposited by radio frequency bias magnetron sputtering 期刊论文
Chinese Physics B, 2009, 卷号: 18, 期号: 9, 页码: 4013-4018
Authors:  Deng, JX;  Zhang, XK;  Yao, Q;  Wang, XY;  Chen, GH;  He, DY(贺德衍);  Deng, JX (reprint author), Beijing Univ Technol, Sch Appl Math & Phys, Beijing 100124, Peoples R China.
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hexagonal boron nitride films  sputtering  UV-visible  optical properties  
Atomic diffusion in Cu/Si (111) and Cu/SiO2/Si (111) systems by neutral cluster beam deposition 期刊论文
CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 4, 页码: 1400-1402
Authors:  Cao, B;  Li, GP(李公平);  Chen, XM(陈熙萌);  Cho, SJ;  Kim, H;  Li, GP (reprint author), Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 730000, Peoples R China.
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Study on stability of hydrogenated amorphous silicon films 期刊论文
CHINESE PHYS, 2005, 卷号: 14, 期号: 11, 页码: 2348-2351
Authors:  Zhu, XH;  Chen, GH;  Zhang, WL;  Ding, Y;  Ma, ZJ;  Hu, YH;  He, B;  Rong, YD;  Chen, GH (reprint author), Beijing Univ Technol, Dept Mat Sci & Engn, Beijing 100022, Peoples R China.
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hydrogenated amorphous silicon (a-Si : H) films  photosensitivity  stability  microstructure  hydrogen elimination (HE) model  
Substrate dependence of properties of sputtered ITO films 期刊论文
CHINESE PHYSICS LETTERS, 2005, 卷号: 22, 期号: 5, 页码: 1228-1231
Authors:  Gao, MZ(高美珍);  Shi, HG(史慧刚);  Job, R;  Li, FS(李发伸);  Fahrner, WR;  Gao, MZ (reprint author), Lanzhou Univ, Key Lab Magnetism & Magnet Mat, Minist Educ, Lanzhou 730000, Peoples R China.
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Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H-SiC 期刊论文
CHINESE PHYS, 2005, 卷号: 14, 期号: 3, 页码: 599-603
Authors:  Xin, G;  Sun, GS;  Li, JM;  Zhang, YX;  Lei, W;  Zhao, WS;  Zeng, YP;  Xin, G (reprint author), Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
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ion implantation  silicon carbide  phosphorus  photoluminescence  
Structure and infrared absorption characterizations of yttrium silicides formed by ion beam synthesis 期刊论文
ACTA PHYSICA SINICA, 2003, 卷号: 52, 期号: 1, 页码: 233-236
Authors:  Wang, WW;  Xie, EQ(谢二庆);  He, DY(贺德衍);  Wang, WW (reprint author), Lanzhou Univ, Dept Phys, Lanzhou 730000, Peoples R China.
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yttrium silicide  ion implantation  infrared irradiation treatment  characteristic infrared absorption spectrum  钇硅化物  离子注入  红外光辐照处理  特征红外光谱