兰州大学机构库

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Stable resistive switching characteristics of ZrO2-based memory device with low-cost 期刊论文
MICROELECTRONIC ENGINEERING, 2017, 卷号: 172, 页码: 26-29
Authors:  Fu, Liping;  Li, YT(李颖弢);  Han, Genliang;  Gao, Xiaoping;  Chen, Chuanbing;  Yuan, Peng;  Li, YT(李颖弢)
Favorite  |    Submit date:2018/01/19
RRAM  ZrO2  Resistive switching  Low-cost  
Mn(OH)(2)-coated Ni(3)S(2 )nanosheets on Ni foam as a cathode for high-performance aqueous asymmetric supercapacitors 期刊论文
JOURNAL OF ENERGY STORAGE, 2022, 卷号: 51
Authors:  Song, Xiaoqiang;  Emin, Adil;  Chen, Yue;  Yang, Mingzhe;  Zou, Situo;  Du, Yihe;  Fu, Yujun;  Li, Yali;  Li, YT(李颖弢);  Li, Junshuai...Song, Xiaoqiang;  Emin, Adil;  Chen, Yue;  Yang, Mingzhe;  Zou, Situo;  Du, Yihe;  Fu, Yujun;  Li, Yali;  Li, YT(李颖弢);  Li, Junshuai;  He, DY(贺德衍)
Favorite  |    Submit date:2022/07/01
Aqueous asymmetric supercapacitors  High performance  Transition metal sulfide  Transition metal hydroxide  Electrodes  Activated carbon  Capacitance  Cathodes  Electrodeposition  Electrolytes  Nanosheets  Nickel compounds  Potassium hydroxide  Sulfur compounds  Supercapacitor  Transition metals  Aqueous asymmetric supercapacitor  Asymmetric supercapacitor  Cycle stability  Metal hydroxide  Ni foam  Performance  Self standings  Transition metal sulfides  Electrochemical electrodes  Manganese compounds  
MXenes for Solar Cells 期刊论文
Nano-Micro Letters, 2021, 卷号: 13, 期号: 1
Authors:  Yin, Lujie;  Li, YT(李颖弢);  Yao, Xincheng;  Wang, Yanzhou;  Jia, Lin;  Liu, Qiming;  Li, Junshuai;  Li, Yali;  He, Deyan
Favorite  |    Submit date:2021/04/16
Ti3C2Tx MXene  Solar cells  Additives  Hole/electron transport layers  Electrodes  Biomechanics  Hallmobility  Holemobility  Electricalconductivity  Highcarriermobility  Photovoltaics  Researchstatus  
Effect of Interface Layer Engineering on Resistive Switching Characteristics of ZrO2-Based Resistive Switching Devices 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 12, 页码: 5390-5394
Authors:  Li, YT(李颖弢);  Li, Xiaoyan;  Fu, Liping;  Chen, Rongbo;  Wang, Hong;  Gao, Xiaoping
Favorite  |    Submit date:2019/10/25
Interface layer  multilayer  resistive random-access memory (RRAM)  resistive switching  
Improved Resistive Switching Uniformity of SiO2 Electrolyte-Based Resistive Random Access Memory Device With Cu Oxidizable Electrode 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 10, 页码: 1599-1601
Authors:  Li, YT(李颖弢);  Yin, Lujie;  Wu, Zewei;  Li, Xiaoyan;  Song, Xiaoqiang;  Gao, Xiaoping;  Fu, LP(傅丽萍)
Favorite  |    Submit date:2020/05/18
Resistive random access memory  oxide electrolyte  resistive switching  uniformity  
基于MOS场效应晶体管的高精度可变电阻器 期刊论文
物理与工程, 2021, 卷号: 31, 期号: 06, 页码: 50-56+62
Authors:  霍显杰;  田力学;  李永刚;  李颖弢
Favorite  |    Submit date:2023/11/22
MOS场效应晶体管  可变电阻  比例积分控制(PI控制)  微控制器(MCU)  电压控制的电压源(VCVS)  
An overview of resistive random access memory based high-density crossbar array 期刊论文
Kexue Tongbao/Chinese Science Bulletin, 2018, 卷号: 63, 期号: 28-29, 页码: 2954-2966
Authors:  Li, Xiaoyan;  Li, YT(李颖弢);  Gao, Xiaoping;  Chen, Chuanbing;  Han, Genliang
Favorite  |    Submit date:2020/07/08
Improvement of read disturb on TaOx-based RRAM cells with optimized pulse programming method 会议论文
2nd IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2019, Chengdu, China, 13-15 Nov. 2019
Authors:  Li, Xiaoyan;  Yu, Jie;  Xu, Xiaoxin;  Luo, Qing;  Yuan, Peng;  Gao, Zhaomeng;  Ding, Qingting;  Lv, Hangbing;  Li, YT(李颖弢)
Favorite  |    Submit date:2020/08/31
Resistance  Programming  Switches  Robustness  Performance evaluation  Random access memory  
负电阻的串联及并联方式研究 期刊论文
物理与工程, 2022, 卷号: 32, 期号: 01, 页码: 47-51
Authors:  霍显杰;  张祎;  李永刚;  田力学;  王方聪;  李颖弢
Favorite  |    Submit date:2022/04/20
负电阻  极性  接地端  串联与并联方式  
Asymmetric Metal Halide Film With Suppressed Leakage Current for High Sensitive X-Ray Detection and Imaging 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2022, 卷号: 43, 期号: 10, 页码: 1709-1712
Authors:  Xu, Youkui;  Li, YT(李颖弢);  Peng, Guoqiang;  Wang, Qian;  Li, ZH(李振华);  Wang, Haoxu;  Wang, Gang;  Jin, ZW(靳志文)
Favorite  |    Submit date:2023/01/03
Barium  Heterojunctions  Lead compounds  Leakage currents  Metal halides  Asymmetric  Device performance  Effective absorption  Halide films  Intrinsic defects  Ion migration  Migration energy  Theoretical calculations  X-ray detections  X-ray detector