兰州大学机构库

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HI hydrolysis-derived intermediate as booster for CsPbI3 perovskite: from crystal structure, film fabrication to device performance 期刊论文
JOURNAL OF SEMICONDUCTORS, 2020
Li, Zhizai; Jin, Zhiwen
Favorite  |    Submit date:2022/10/03
Suppressed light-induced phase transition of CsPbBr2I: Strategies, progress and applications in the photovoltaic field 期刊论文
Journal of Semiconductors, 2021, 卷号: 42, 期号: 7
Authors:  Zhang, Hushan;  Jin, Zhiwen
Favorite  |    Submit date:2021/08/12
perovskite  CsPbBr2I  stability  phase transition  phase segregation  
HI hydrolysis-derived intermediate as booster for CsPbI3 perovskite: from crystal structure, film fabrication to device performance 期刊论文
Journal of Semiconductors, 2020, 卷号: 41, 期号: 5
Authors:  Li, Zhizai;  Jin, Zhiwen
Adobe PDF(980Kb)  |  Favorite  |    Submit date:2020/09/22
CsPbI3  HI  intermediate  crystal structure  stability  CsPbI_3  
Singlet fission and its application in organic solar cells 期刊论文
Journal of Semiconductors, 2022, 卷号: 43, 期号: 8
Authors:  Zhang, YM(张雅敏);  Xiao, Zuo;  Ding, Liming;  Zhang, HL(张浩力)
Favorite  |    Submit date:2022/11/08
An ultra-low-power area-efficient non-volatile memory in a 0.18μm single-poly CMOS process for passive RFID tags 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 8, 页码: 94-98
Authors:  Jia XY(贾晓云);  Feng P(冯鹏);  Zhang SG(张胜广);  Wu NJ(吴南健);  Zhao BQ(赵柏秦);  Liu S(刘肃);  Wu, N. (nanjian@red.semi.ac.cn)
Favorite  |    Submit date:2016/10/21
non-volatile memory  ultra-low-power  area-efficient  CMOS  RFID  
Photo-sensitive characteristics of negative resistance turn-around occurring in SIPTH 期刊论文
Journal of Semiconductors, 2009, 卷号: 30, 期号: 4, 页码: 44-47
Authors:  Ji T(季涛);  Yang LC(杨利成);  Li HR(李海蓉);  He SH(何山虎);  Li SY(李思渊);  Ji, T. (jit626@sues.edu.cn)
Favorite  |    Submit date:2016/10/21
static induction photosensitive thyristors  gate series resistance  double injection effect  potential barrier  light-generated carriers  
Physical effect on transition from blocking to conducting state of barrier-type thyristor 期刊论文
Journal of Semiconductors, 2010, 卷号: 31, 期号: 12, 页码: 33-37
Authors:  Li HR(李海蓉);  Li SY(李思渊);  Hairong, L. (hrli@lzu.edu.cn)
Favorite  |    Submit date:2016/10/21
barrier-type thyristor  negative differential resistance  physical effect  conductance modulation  
Analytical model for the dispersion of sub-threshold current in organic thin-film transistors 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 11, 页码: 55-59
Authors:  Chen YP(陈映平);  Shang LW(商立伟);  Ji ZY(姬濯宇);  Wang H(王宏);  Han MX(韩买兴);  Liu X(刘欣);  Liu M(刘明);  Liu, M. (liuming@ime.ac.cn)
Favorite  |    Submit date:2016/10/21
OTFT  sub-threshold current  level 61 RPI a-Si TFT model  equivalent circuit model  HSPICE  
Improvements on high voltage performance of power static induction transistors 期刊论文
Journal of Semiconductors, 2009, 卷号: 30, 期号: 10, 页码: 38-42
Authors:  Wang YS(王永顺);  Li HR(李海蓉);  Wang ZT(王紫婷);  Li SY(李思渊);  Wang, Y. (wangysh@mail.lzjtu.cn)
Adobe PDF(3647Kb)  |  Favorite  |    Submit date:2015/06/24
static induction transistor  parasitic effect  breakdown voltage  deep trench  
A micron-sized GMR sensor with a CoCrPt hard bias 期刊论文
Journal of Semiconductors, 2010, 卷号: 31, 期号: 2, 页码: 19-22
Authors:  Zheng Y(郑洋);  Qu BJ(曲炳郡);  Liu X(刘晰);  Wei D(韦丹);  Wei FL(魏福林);  Ren TL(任天令);  Liu LT(刘理天);  Bingjun, Q. (qubj@mail.tsinghua.edu.cn)
Adobe PDF(3471Kb)  |  Favorite  |    Submit date:2015/06/24
GMR  spin-valve  magnetic stabilization  Barkhausen noise