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兰州大学机构库
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Geant4-based calculation of electric field in deep dielectric charging 期刊论文
ACTA PHYSICA SINICA, 2009, 卷号: 58, 期号: 1, 页码: 684-689
Authors:  Qin, XG;  He, DY(贺德衍);  Wang, J;  Qin, XG (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China.
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satellite  deep dielectric charging  Geant4  electric field  卫星  介质深层充电  Geant4  电场  
Influence of evaporation conditions on the structure of the polycrystalline lead iodide films 期刊论文
ACTA PHYSICA SINICA, 2007, 卷号: 56, 期号: 10, 页码: 6028-6032
Authors:  Li, YH(李玉红);  He, DY(贺德衍);  Zhang, Y;  Li, ZS;  Li, YH (reprint author), Lanzhou Univ, Sch Unclear Sci & Technol, Lanzhou 730000, Peoples R China.
Favorite  |    Submit date：2015/12/15
evaporating rate  temperature of the substrate  lead iodide films  structure of the polycrystalline  vacuum evaporation  
Preparation and characterization of hydrogenated microcrystalline silicon films by HW-MWECR-CVD 期刊论文
ACTA PHYSICA SINICA, 2006, 卷号: 55, 期号: 11, 页码: 6147-6151
Authors:  Liu, GH;  Ding, Y;  Zhu, XH;  Chen, GH;  He, DY(贺德衍);  Liu, GH (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China.
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HW-MWECR-CVD  hydrogenated microcrystalline silicon films  Raman scattering  X-ray diffraction  微波电子回旋共振化学气相沉积  氢化微晶硅薄膜  拉曼散射  X射线衍射  
Effect of H-2 on polycrystalline si films deposited by plasma-enhanced CVD using ar-diluted SiH4 期刊论文
ACTA PHYSICA SINICA, 2006, 卷号: 55, 期号: 11, 页码: 5959-5963
Authors:  Qi, J(祁菁);  Jin, J;  Hu, HL;  Gao, PQ;  Yuan, BH;  He, DY(贺德衍);  Qi, J (reprint author), Lanzhou Univ, Dept Phys, Lanzhou 730000, Peoples R China.
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low-temperature polycrystalline Si film  PECVD  Ar-diluted SiH4  H-2 flow  
Preparation of cubic boron nitride films by radio frequency sputtering 期刊论文
ACTA PHYSICA SINICA, 2006, 卷号: 55, 期号: 10, 页码: 5441-5443
Authors:  Tian, L;  Ding, Y;  Chen, H;  Liu, JK;  Deng, JX;  He, DY(贺德衍);  Chen, GH;  Chen, GH (reprint author), Beijing Polytech Univ, Dept Appl Phys, Beijing 100022, Peoples R China.
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cubic boron nitride  radio frequency sputtering  compressive stress  negative substrate bias  
Dielectric properties and leakage current of MgO/(Ba0.8Sr0.2)TiO3 heterostructured films prepared by sol-gel technique 期刊论文
ACTA PHYSICA SINICA, 2006, 卷号: 55, 期号: 4, 页码: 2069-2072
Authors:  Jia, JF;  Huang, K;  Pan, QT;  Li, SG;  He, DY(贺德衍);  Jia, JF (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China.
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ferroelectric MgO/(Ba-0.8,Sr-0.2)TiO3 multilayer film  leakage current  dielectric constant  
Structures and dielectric properties of (Ba-0.7 Sr-0.3)TiO3/LaNiO3 hetero-structure films prepared by sol-gel technique 期刊论文
ACTA PHYSICA SINICA, 2005, 卷号: 54, 期号: 9, 页码: 4406-4410
Authors:  Jia, JF;  Huang, K;  Part, QT;  He, DY(贺德衍);  Jia, JF (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China.
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(Ba-x Sr1-x) TiO3 thin film  LaNiO3 bottom electrode  sol-gel technology  
Field emission properties of diamond-like carbon and carbon nitride films deposited by the electrochemical method 期刊论文
ACTA PHYSICA SINICA, 2005, 卷号: 54, 期号: 8, 页码: 3935-3939
Authors:  Fan, Y;  Xie, EQ(谢二庆);  Li, RS;  Lin, HF;  Jun, Z;  He, DY(贺德衍);  Fan, Y (reprint author), Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China.
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electrochemical deposition  diamond-like carbon films  CNx films  electron field emission  
Aluminum-induced crystallization during deposition of silicon films by inductively coupled plasma CVD 期刊论文
ACTA PHYSICA SINICA, 2005, 卷号: 54, 期号: 1, 页码: 269-273
Authors:  Wang, XQ;  Li, JS(栗军帅);  Chen, Q;  Qi, J(祁菁);  Yin, M(尹旻);  He, DY(贺德衍);  Wang, XQ (reprint author), Lanzhou Univ, Dept Phys, Lanzhou 730000, Peoples R China.
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ICP-CVD  Al-induced crystallization  Si thin films  low-temperature growth  
Computer simulation of thin-film epitaxy growth 期刊论文
ACTA PHYSICA SINICA, 2004, 卷号: 53, 期号: 8, 页码: 2687-2693
Authors:  Zheng, XP;  Zhang, PF;  Liu, J;  He, DY(贺德衍);  Ma, JT(马建泰);  Zheng, XP (reprint author), Lanzhou Jiaotong Univ, Key Lab Optoelect Technol & Intelligent Control, Minist Educ, Lanzhou 730070, Peoples R China.
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Monte-Carlo  computer simulations  thin film growth  Monte-Carlo算法  计算机模拟  薄膜生长